METHOD FOR MANUFACTURING FLOATING GATE OF NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a floating gate of a non-volatile memory device is provided to secure a program recording and erasing characteristic and improve electrical characteristics by sharply forming the edge portion of the floating gate. CONSTITUTION: A conductive layer(104b) is formed at the upper portion of a semiconductor substrate(100). A nitride pattern is formed on the resultant structure for partially exposing the conductive layer. An etching process is carried out for roundly forming a predetermined portion of the conductive layer. An oxide layer is uniformly formed at the upper portion of the resultant structure. A spacer(110a) is formed at both sidewalls of the nitride pattern by carrying out an etch-back process. A source line(116) is formed between spacers for being electrically connected with the semiconductor substrate.