发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a technique for reducing a through current and a technique for optimizing a column selection timing in a semiconductor device. <P>SOLUTION: The device is provided with a write Y selection line (WYS) for controlling operation of column selection switches 112 and 114 in a write amplifier 110, and a read Y selection line (RYS) for controlling operation of column selection switches 121 and 123 in a read amplifier 120 separately from each other. By setting the column selection switches 121 and 123 in non-operating condition in the read amplifier 120 at the time of writing, the through current at the time of writing is reduced. In this case, a write IO line and a read IO line are arranged so that they cross a sense amplifier column, and the write column selection line and the read column selection line are arranged in parallel to the sense amplifier column. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004062966(A) 申请公布日期 2004.02.26
申请号 JP20020218020 申请日期 2002.07.26
申请人 HITACHI LTD 发明人 SAKAMOTO MASATOSHI;HASEGAWA MASATOSHI
分类号 H01L27/108;A01K29/00;G11C5/00;G11C7/10;G11C11/401;G11C11/407;G11C11/4076;H01L21/8242 主分类号 H01L27/108
代理机构 代理人
主权项
地址