发明名称 Non-contiguous address erasable blocks and command in flash memory
摘要 A non-volatile memory device includes a memory array having erasable blocks or memory cells. The array has pages that are not one continuous array row. As such, the array row is segmented into page rows. The page rows are addressed contiguously across the page and a main erase block is divided into sub-erase blocks that follow the page row segmentation.
申请公布号 US2004039870(A1) 申请公布日期 2004.02.26
申请号 US20020224913 申请日期 2002.08.21
申请人 MICRON TECHNOLOGY, INC. 发明人 ROOHPARVAR FRANKIE FARIBORZ
分类号 G06F12/00;G06F12/02;G11C11/34;(IPC1-7):G06F12/00 主分类号 G06F12/00
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