| 摘要 |
PURPOSE: An efficiency improved thin film silicon solar cell and a manufacturing method thereof are provided to prevent a back surface recombination and a back surface reflection by forming an insulating layer between a P type active layer and P+ type base layer. CONSTITUTION: A thin film silicon solar cell is provided with a P+ type semiconductor layer(22) formed at the upper portion of a substrate(20), an insulating layer formed at the upper portion of the resultant structure for selectively exposing the P+ type semiconductor layer, and a P type semiconductor layer(25) formed at the upper portion of the insulating layer for being partially and electrically connected to the P+ type semiconductor layer. The thin film silicon solar cell further includes an N+ type semiconductor layer(26) formed on the P type semiconductor layer and a base contact(29) formed at the predetermined upper portion of the P+ type semiconductor layer. |
