| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor, which is lower in dislocation density than in the conventional method, in a shorter time than that in a usual method, and to provide a semiconductor wafer and a semiconductor device. <P>SOLUTION: A first nitride semiconductor is grown on a substrate at a temperature of 1000°C or so and then turned into fine crystal grains of nitride semiconductor through a thermal treatment. Then a second nitride semiconductor is grown thereon into nitride semiconductor islands. Furthermore, a third nitride semiconductor is grown thereon to bury the nitride semiconductor islands, thereby obtaining a flat surface. <P>COPYRIGHT: (C)2004,JPO |
