| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which prevents deterioration in the reliability of an insulating film. SOLUTION: In the method of manufacturing the semiconductor device, a part of a gate insulating film 7 made up of a silicon oxide film having a thickness of about 4 nm is formed by performing first heat treatment, in an atmosphere of wet oxidation containing about 50 vol% of O<SB>2</SB>gas and about 50 vol% of H<SB>2</SB>gas, at a temperature (750°C) lower than a temperature causing a viscous flow on the gate insulating film 7. Thereafter, the rest of the gate insulating film 7 made up of a silicon oxide film having a thickness of about 3 nm is formed by performing second heat treatment, in an atmosphere of wet oxidation containing about 10 vol% of O<SB>2</SB>gas, about 10 vol% of H<SB>2</SB>gas, and about 80 vol% of N<SB>2</SB>gas, at a temperature (about 1000°C) equal to or higher than a temperature causing a viscous flow on the gate insulating film 7. COPYRIGHT: (C)2004,JPO
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