| 摘要 |
PROBLEM TO BE SOLVED: To provide a susceptor structure which is capable of exhausting an atmosphere containing dopant species full in a wafer pocket, without causing a great quantity of material gas to flow under a susceptor from the front surface side thereof. SOLUTION: The susceptor 4 has a nearly disc-like shape, and is formed with the recessed wafer pocket 13 to house a wafer 12 therein on a front surface. The susceptor has cutouts 25 for inflow gas which are extended from a side face or a rear face of the susceptor 4 through to the wafer pocket 13, and cutouts 26 for outflow gas which are extended from the wafer pocket 13 through to the side face or the rear face of the susceptor 4. By the rotation of the susceptor 4 during epitaxial film formation, a carrier gas enters the wafer pocket 13 via the cutouts 25 for inflow gas as indicated by arrows (b) while at the same time a gas inside the wafer pocket 13 is ejected via the cutouts 26 as indicated by arrows (c). COPYRIGHT: (C)2004,JPO
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