| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer-heating device configuring a semiconductor manufacturing and inspecting apparatus which has a high cooling rate when a setting temperature is changed. SOLUTION: The wafer-heating device is configured under the condition that the distance between a gas injector and a heat equalizing plate is 0.2-3 mm, the closely opposed area of a nozzle having a gas injection port to the heat equalizing plate is 80 mm<SP>2</SP>or less, and relation among the flow velocity F0 of cooling gas injected from the gas injection port expressed by the cooling gas flow rate (liter/min.) /the total area mm<SP>2</SP>of gas injection ports, the area S0 of the heat equalizing plate, and the number N of nozzles is shown by 2≤(S0/N)/F0≤28, and N≥4. COPYRIGHT: (C)2004,JPO
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