APPARATUS FOR PULLING SILICON SINGLE CRYSTAL AND METHOD FOR PULLING THE SILICON SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To relatively easily manufacture an ingot of a defectless silicon single crystal. SOLUTION: The apparatus for pulling the silicon single crystal is provided with: a support member 51 of which the one end is stuck to the bottom end of a heat shielding member 36; and a plurality of stationary blades 52 which are stuck to the other end of the support member 51 and are disposed radially around the central axis of the ingot 25 within a silicon melt 12 below a solid-liquid boundary 26 of the ingot 25 and the silicon melt 12. A plurality of the stationary blades 52 are so constituted that the solid-liquid boundary 26 is upwardly crowned by inducing convection currents 12a and 12b in the silicon melt 12 by rotation of a quartz crucible 13. The pulling method comprises rotating the quartz crucible 13 to induce the convection currents 12a and 12b in the silicon melt 12 by a plurality of the stationary blades 52 when the ingot 25 is pulled from the silicon melt 12 and controlling the rotating speed of the quartz crucible 13 in such a manner that the solid-liquid boundary 26 is upwardly crowned. COPYRIGHT: (C)2004,JPO