发明名称 |
Cross diffusion barrier layer in polysilicon |
摘要 |
A semiconductor device includes a cross diffusion barrier layer sandwiched between a gate layer and an electrode layer. The gate layer has a first gate portion of doped polysilicon of first conductivity type adjacent to a second gate portion doped polysilicon of second conductivity type. The cross diffusion barrier layer includes a combination of silicon and nitrogen. The cross diffusion barrier layer adequately prevents cross diffusion between the first and second gate portions while causing no substantial increase in the resistance of the gate layer.
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申请公布号 |
US2004036119(A1) |
申请公布日期 |
2004.02.26 |
申请号 |
US20020228839 |
申请日期 |
2002.08.26 |
申请人 |
TANG SANH D.;CHO CHIH-CHEN;BURKE ROBERT;IYENGAR ANURADHA;GIFFORD EUGENE R. |
发明人 |
TANG SANH D.;CHO CHIH-CHEN;BURKE ROBERT;IYENGAR ANURADHA;GIFFORD EUGENE R. |
分类号 |
H01L21/8238;H01L21/8244;H01L27/11;H01L29/49;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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地址 |
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