| 摘要 |
<p>A trench gate type field effect transistor capable of effectively suppressing the short channel effect is formed with a shallow junction between a source and a drain, at low resistance, and through a simple process. In a method of manufacturing a trench gate type field effect transistor (100A), wherein an impurity introduced layer (13) which is to become a source or a drain is formed by introducing an impurity into a semiconductor substrate (1), a trench (15) is formed in the impurity introduced layer, a gate insulating film (5) is formed on a bottom face of the trench (15), and a gate (G) is formed so as to fill the trench (15), laser annealing for activating the impurity is performed after the impurity is introduced into the semiconductor substrate (1) and before the gate G is formed. <IMAGE></p> |
