Method and array for processing carrier materials by means of heavy ion radiation and subsequent etching

摘要

A method and a system for processing carrier materials by means of heavy ion irradiation and subsequent etching, wherein the irradiation with heavy ions is carried out in such a way that a beam ( 1 ) of a high-energy heavy ion radiation ( 1.1 ) impinges on the surface ( 2 ) of a carrier material under at least two different angles. The fluence, energy and impinging direction of the heavy ion rays ( 1.1 ) are selected in such a way that there will result a maximum number of intersecting or coinciding latent ion traces ( 3 ) and common intersections of the recesses ( 4 ) resulting from a chemical etching process following heavy ion irradiation are obtained.