In a pattern forming method, a trench (103) is formed on a flat base (101,102). A pattern material (105) is arranged only in and around the trench so as to project upward from the surface of the base and to be larger than the opening of the trench. The pattern material projecting from the surface of the base is removed by chemical mechanical polishing (CMP) so as to be flush with the upper surface of the base. <IMAGE>