| 发明名称 |
Heterojunction bipolar transistor (hbt) having improved emitter-base grading structure |
| 摘要 |
<p>A heterojunction bipolar transistor (HBT) (200), including an emitter (214) formed from a first semiconductor material, a base (208) formed from a second semiconductor material, and a grading structure (250) between the emitter (214) and the base (208) is disclosed. The grading structure (250) comprises a semiconductor material containing at least one element not present in the first and second semiconductor materials, where the grading structure (250) has a conduction band energy substantially equal to a conduction band energy of the base (208) at an interface between the base (208) and the grading structure (250), and where the grading structure (250) has a conduction band energy substantially equal to a conduction band energy of the emitter (214) at an interface between the emitter (214) and the grading structure (250). <IMAGE></p> |
| 申请公布号 |
EP1391938(A2) |
申请公布日期 |
2004.02.25 |
| 申请号 |
EP20030010839 |
申请日期 |
2003.05.14 |
| 申请人 |
AGILENT TECHNOLOGIES INC |
发明人 |
BAHL, SANDEEP R.;HUESCHEN, MARK;MOLL, NICOLAS J. |
| 分类号 |
H01L21/331;H01L29/08;H01L29/10;H01L29/15;H01L29/737;(IPC1-7):H01L29/737 |
主分类号 |
H01L21/331 |
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| 主权项 |
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