| 摘要 |
PURPOSE: A nitride semiconductor is provided to improve capacity and guarantee reliability by reducing a crystal defect generated by a difference in a thermal expansion coefficient and a lattice constant between a GaN-based single crystal thin film grown on a substrate and the substrate and by improving the crystallinity of a GaN-based nitride semiconductor. CONSTITUTION: The substrate is prepared. A plurality of GaN-based buffer thin films are formed on the substrate. A GaN-based single crystal layer is formed on the GaN-based buffer thin film. The GaN-based buffer thin film is a triple structure composed of AlyInxGa1-x,yN/InxGa1-xN/GaN(wherein 0<=x<=1 and 0<=y<=1).
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