发明名称 |
Semiconductor device with LDD structure and process of manufacturing the same |
摘要 |
A semiconductor device comprises: gate electrode formed on a semiconductor substrate through the intervention of a gate insulating film; and a source/drain region provided with a silicide film on its surface and formed in the semiconductor substrate, wherein the source/drain region has an LDD region whose surface is partially or entirely tapered and an interface between the semiconductor substrate and the silicide film in the source/drain region is located higher than a surface of the semiconductor substrate below the gate electrode. <IMAGE> |
申请公布号 |
EP1152470(A3) |
申请公布日期 |
2004.02.25 |
申请号 |
EP20010304019 |
申请日期 |
2001.05.02 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
MORIMOTO, HIDENORI;ADAN, ALBERTO O. |
分类号 |
H01L21/28;H01L21/336;H01L21/762;H01L21/8238;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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