发明名称 Assembly of power semiconductors with a compensation layer facing the heatsink
摘要 Structure consists of a semiconducting chip (3) with a solderable substrate surface (3b) beneath the chip. An expansion layer (9) of a metal textile is soldered between the chip and a metal surface (1b'') of a metal substrate (1a,1b) to compensate for different thermal expansions of the chip relative to the metal surface. Independent claims are also included for the following: a power electronics device with at least one flat semiconductor and the use of a metal textile compensating layer or an expansion layer of metal fibers.
申请公布号 EP1130643(A3) 申请公布日期 2004.02.25
申请号 EP20010105300 申请日期 2001.03.05
申请人 D-TECH GMBH ANTRIEBSTECHNIK UND MIKROELEKTRONIK 发明人 GABRIEL, RUPPRECHT
分类号 H01L21/60;H01L23/373;(IPC1-7):H01L23/373 主分类号 H01L21/60
代理机构 代理人
主权项
地址