发明名称 |
Assembly of power semiconductors with a compensation layer facing the heatsink |
摘要 |
Structure consists of a semiconducting chip (3) with a solderable substrate surface (3b) beneath the chip. An expansion layer (9) of a metal textile is soldered between the chip and a metal surface (1b'') of a metal substrate (1a,1b) to compensate for different thermal expansions of the chip relative to the metal surface. Independent claims are also included for the following: a power electronics device with at least one flat semiconductor and the use of a metal textile compensating layer or an expansion layer of metal fibers. |
申请公布号 |
EP1130643(A3) |
申请公布日期 |
2004.02.25 |
申请号 |
EP20010105300 |
申请日期 |
2001.03.05 |
申请人 |
D-TECH GMBH ANTRIEBSTECHNIK UND MIKROELEKTRONIK |
发明人 |
GABRIEL, RUPPRECHT |
分类号 |
H01L21/60;H01L23/373;(IPC1-7):H01L23/373 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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