发明名称 METHOD FOR PREPARING ALUMNA COATING FILM HAVING Alpha-TYPE CRYSTAL STRUCTURE AS PRIMARY STRUCTURE
摘要 <p>For forming alumina films on substrates by sputtering of an aluminum metal target in an oxidizing gas-containing atmosphere, a method of producing alpha crystal structure-based alumina films efficiently is provided which comprises, as the early film formation stage, the step of forming films under conditions suited for the formation of alpha crystal structure alumina, for example the step comprising forming alpha crystal structure alumina in the poisoning mode discharge condition only in the early stage of film formation. <IMAGE></p>
申请公布号 AU2003254889(A1) 申请公布日期 2004.02.25
申请号 AU20030254889 申请日期 2003.08.08
申请人 KABUSHIKI KAISHA KOBE SEIKO SHO 发明人 HIROSHI TAMAGAKI;YOSHIMITSU IKARI;TOSHIMITSU KOHARA
分类号 C23C14/00;C23C14/08;(IPC1-7):C23C14/08;C23C14/34;B23B27/14 主分类号 C23C14/00
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