发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
In the present invention, there is disclosed a semiconductor device whose copper interconnect is formed multilevel in structure; wherein at least one interlayer film lying between layers of the copper interconnect has a layered structure in which an amorphous carbon film containing fluorine and a SiO2 film are laid in this order from the side of the underlying copper interconnect; a layered structure in which a silicon nitride and then a silicon nitride oxide or a silicon carbide are laid in this order; or a structure comprising a single silicon carbide layer. Such interlayer films serve as anti-reflective coatings. |
申请公布号 |
GB2344464(B) |
申请公布日期 |
2004.02.25 |
申请号 |
GB19990028740 |
申请日期 |
1999.12.03 |
申请人 |
* NEC CORPORATION;* NEC ELECTRONICS CORPORATION |
发明人 |
YOSHIHASA * MATSUBARA |
分类号 |
H01L21/3205;H01L21/027;H01L21/314;H01L21/768;H01L23/52;H01L23/522;H01L23/532 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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