NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A nitride semiconductor light emitting device is provided to improve capacity and guarantee reliability by reducing a crystal defect generated by a difference in a thermal expansion coefficient and a lattice constant between a GaN-based single crystal layer grown on a substrate and the substrate. CONSTITUTION: The substrate is prepared. A GaN-based buffer thin film is formed on the substrate. An AlyGa1-yN/GaN short period superlattice(SPS) layer of a sandwich structure is formed on an undoped GaN thin film or an In-doped GaN thin film which is formed on the buffer thin film(wherein 0<=y<=1). The first electrode layer of an n-GaN layer is formed on the AlyGa1-yN/GaN SPS layer. An active layer of a multi-quantum well structure is formed on the first electrode layer. The second electrode layer of a p-GaN layer is formed on the active layer.