发明名称 DUAL OUTPUT MATCHING CIRCUIT OF RF POWER AMPLIFIER
摘要 PURPOSE: A dual output matching circuit of an RF power amplifier is provided to maximize the performance at high power low power mode by changing a matching circuit according to a power mode. CONSTITUTION: A dual output matching circuit of an RF power amplifier includes a bias circuit(1), an input match(2), a drive amplifier(3), an interstage match(4), a power amplifier(5), and an output match(6). The bias circuit(1) changes a bias point by controlling the base current of each amplifier. The input match(2) filters an RF signal. The drive amplifier(3) is operated by the base current of the bias circuit to amplify the RF signal. The interstage match(4) filters the RF signal of the drive amplifier. The power amplifier(5) is operated by the base current of the bias circuit to amplify the RF signal. The output match(6) filters the RF signal of the power amplifier. The dual output matching circuit of the RF power amplifier further includes a diode and an auxiliary match circuit(100). The diode includes a cathode connected in parallel to an input terminal of the output match(6) and an anode connected to a mode switching signal terminal. The auxiliary match circuit(100) is connected to a rear end of the anode of the diode.
申请公布号 KR20040016603(A) 申请公布日期 2004.02.25
申请号 KR20020048852 申请日期 2002.08.19
申请人 LG INNOTEC CO., LTD. 发明人 JUNG, JAE GYEONG
分类号 H03F3/189;(IPC1-7):H03F3/189 主分类号 H03F3/189
代理机构 代理人
主权项
地址