发明名称 |
Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film |
摘要 |
<p>A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film. <IMAGE></p> |
申请公布号 |
EP1391429(A1) |
申请公布日期 |
2004.02.25 |
申请号 |
EP20030254829 |
申请日期 |
2003.08.01 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
CHO YOUNG-JIN;MIN YO-SEP;PARK YOUNG-SOO;LEE JUNG-HYUN;LEE JUNE-KEY;LEE YONG-KYUN |
分类号 |
C23C14/06;C01B33/00;C01G29/00;C04B35/475;C23C16/42;H01L21/02;H01L21/28;H01L21/316;H01L21/8242;H01L27/108;H01L29/51;(IPC1-7):C01G29/00 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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