Small emitter and base-collector bi-polar transistor

摘要

In a high speed BJT device, the method for producing the device includes forming a self-aligned BJT through the use of a single mask by making use of a single layer of polysilicon. The method includes forming a window in the polysilicon to define a base poly region and an emitter poly region. An underlying oxide/nitride stack is etched in a two etch process to define base and emitter regions for growing a small base and a small emitter. This displays small base-collector and base-emitter junction regions to reduce the capacitance.