发明名称 |
Dual-gate MOSFET with channel potential engineering |
摘要 |
A semiconductor device with reduced hot carrier injection and punch through is formed with a dual gate electrode comprising edge conductive portions, a central conductive portion, and dielectric sidewall spacers formed between the edge conductive portions and central conductive portion. The edge conductive portions provide high potential barriers against the active regions, thereby reducing threshold voltage roll off and leakage current.
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申请公布号 |
US6696725(B1) |
申请公布日期 |
2004.02.24 |
申请号 |
US20000527227 |
申请日期 |
2000.03.16 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
AN JUDY X.;YU BIN |
分类号 |
H01L21/28;H01L21/336;H01L29/49;H01L29/78;(IPC1-7):H01L31/119;H01L29/94;H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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