发明名称 |
Method for performing photolithography |
摘要 |
A method for generating a photoresist pattern on top of an object that includes a layer of material that is opaque to light of a predetermined wavelength. The object is first covered with a layer of photoresist material. The layer of photoresist material is then irradiated with light of the predetermined wavelength from a position under the object such that the object casts a shadow into the layer of photoresist. The photoresist material is then developed to generate the photoresist pattern. The layer of photoresist material is irradiated from below the object by providing a reflecting surface below the object and a light source above the object. A mask is positioned between the object and the light source such that the mask casts a shadow that covers the object and a portion of the area surrounding the object. The method of the invention is well suited for depositing a layer of dielectric material over a device in which the dielectric layer has a via therethrough terminating on a metallic pad that is part of the device.
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申请公布号 |
US6696223(B2) |
申请公布日期 |
2004.02.24 |
申请号 |
US20010933479 |
申请日期 |
2001.08.16 |
申请人 |
AGILENT TECHNOLOGIES, INC. |
发明人 |
HIDAKA TETSUYA;KANEKO YAWARA |
分类号 |
G03F7/00;G03F7/20;H01L33/00;(IPC1-7):G03F7/00 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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