发明名称 Method for manufacturing a thin-film structure having a reliably removable oxide layer
摘要 In a thin-film structure, since a flat face of a bump, which is exposed at the surface of an insulating layer and is to be in contact with an electrode layer, is an exposed surface of a nickel layer, an oxide layer on the flat face can be reliably removed by using ion-milling or sputter etching.
申请公布号 US6694611(B2) 申请公布日期 2004.02.24
申请号 US20010919107 申请日期 2001.07.31
申请人 ALPS ELECTRIC CO., LTD. 发明人 SATO KIYOSHI
分类号 G11B5/31;G11B5/39;H01F17/00;H01F41/04;H01L23/498;H05K3/24;H05K3/40;(IPC1-7):H01R9/00;H05K3/00 主分类号 G11B5/31
代理机构 代理人
主权项
地址