发明名称 |
Long wavelength laser diodes on metamorphic buffer modified gallium arsenide wafers |
摘要 |
A light-emitting device includes a GaAs substrate, a light-emitting structure disposed above the substrate and capable of emitting light having a wavelength of about 1.3 microns to about 1.55 microns, and a buffer layer disposed between the substrate and the light-emitting structure. The composition of the buffer layer varies through the buffer layer such that a lattice constant of the buffer layer grades from a lattice constant approximately equal to a lattice constant of the substrate to a lattice constant approximately equal to a lattice constant of the light-emitting structure. The light-emitting device exhibits improved mechanical, electrical, thermal, and optical properties compared to similar light-emitting devices grown on InP substrates.
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申请公布号 |
US6697412(B2) |
申请公布日期 |
2004.02.24 |
申请号 |
US20010834832 |
申请日期 |
2001.04.13 |
申请人 |
TRIQUINT SEMICONDUCTOR, INC. |
发明人 |
BEAM, III EDWARD A.;EVANS GARY A.;SAUNIER PAUL;KAO MING-YIH;FANNING DAVID M.;DAVENPORT WILLIAM H.;TURUDIC ANDY;WOHLMUTH WALTER A. |
分类号 |
H01L21/205;H01L33/30;H01S5/02;H01S5/183;H01S5/323;H01S5/34;H01S5/343;(IPC1-7):H01S5/183 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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