Temperature and voltage compensated reference current generator

摘要

Reference current generators are described for producing a reference current (Iref) that is proportional to an expected sensed current of a target floating-gate memory cell in its conductive state. The reference current (Iref) is compensated to track the expected sensed current across variations in both ambient temperature and supply voltage. The reference current generators are able to track the expected sensed current of a floating-gate memory cell without using a floating-gate transistor in the generator.