发明名称 Power semiconductor module
摘要 Disclosed in a power semiconductor module which includes a stack of carrier substrates, disposed one above the other in multiple layers and provided with at least one conductor track on at least one main surface, in which at least one electronic semiconductor component is disposed between two adjacent carrier substrates of the stack and is contacted electrically and heat-conductively to at least one conductor track of a carrier substrate disposed in the stack above the semiconductor component and to at least one further conductor track of a carrier substrate disposed in the stack below the semiconductor component. To both improve heat output and provide a compact design, the two outer carrier substrates of the stack are embodied as one upper and one lower housing wall of a closed housing part surrounding the at least one semiconductor component, and the interstices between the stacked carrier substrates are tightly closed by an encompassing wall secured to the carrier substrates.
申请公布号 US6697257(B1) 申请公布日期 2004.02.24
申请号 US20020857802 申请日期 2002.04.09
申请人 ROBERT BOSCH GMBH 发明人 WOLF KUNO;KOELLE GERHARD;ZAREMBA JUERGEN;JACOB WOLFGANG;WALLRAUCH ALEXANDER;RUF CHRISTOPH;SCHMID RALF;URBACH PETER;BIRECKOVEN BERND;KRAUSS HANS-REINER;SCHOLZ DIRK
分类号 H01L23/538;H01L25/07;H01L25/18;(IPC1-7):H05K7/20 主分类号 H01L23/538
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