| 发明名称 |
Laser diode operable in 1.3mum or 1.5mum wavelength band with improved efficiency |
| 摘要 |
A laser diode includes an active layer of a group III-V compound semiconductor device containing N and As as the group V elements. The active layer has exposed lateral edges wherein the N atoms are substituted by the As atoms at the exposed lateral edges by an annealing process conducted in a AsH3 atmosphere.
|
| 申请公布号 |
US6697404(B1) |
申请公布日期 |
2004.02.24 |
| 申请号 |
US20000515104 |
申请日期 |
2000.02.29 |
| 申请人 |
RICOH COMPANY, LTD. |
发明人 |
SATO SHUNICHI |
| 分类号 |
H01S5/183;H01S5/20;H01S5/227;H01S5/323;H01S5/343;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/183 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
