Silicon carbide semiconductor switching device

摘要

An object of the present invention is to improve the relationship between the switching loss and the conduction loss in a semiconductor device comprising a diode and a switching device made of silicon carbide, while suppressing occurrence of voltage oscillation of the device having a high amplitude. A resistor (12) is connected in parallel to a diode (11) made of silicon carbide. Although a resistive component of the diode (11) varies widely with turn-on and turn-off of the diode (11), connecting the resistor (12) in parallel to the diode (11) allows suppression of variations in a resistive component of an LCR circuit formed by the diode (11) and an external wiring. Accordingly, the LCR circuit is unlikely to satisfy the condition of natural oscillation and an increase in the quality factor of the LCR circuit is suppressed.