发明名称 Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processes
摘要 Methods are provided for identifying root causes of particle issues and for developing particle-robust process recipes in plasma deposition processes. The presence of in situ particles within the substrate processing system is detected over a period of time that spans multiple distinct processing steps in the recipe. The time dependence of in situ particle levels is determined from these results. Then, the processing steps are correlated with the time dependence to identify relative particle levels with the processing steps. This information provides a direct indication of which steps result in the production of particle contaminants so that those steps may be targeted for modification in the development of particle recipes.
申请公布号 US6696362(B2) 申请公布日期 2004.02.24
申请号 US20020122058 申请日期 2002.04.12
申请人 APPLIED MATERIALS INC. 发明人 ROSSMAN KENT;OLMER LEONARD JAY;NGUYEN PHILLIP
分类号 C23C16/44;C23C30/00;G01Q30/16;G01Q30/20;H01J37/32;H01L21/316;H01L21/768;(IPC1-7):H01L21/31;H01L21/469 主分类号 C23C16/44
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