Byte-selectable EEPROM array utilizing single split-gate transistor for non-volatile storage cell

摘要

A flash electrically-erasable, programmable read-only memory (EEPROM) with reduced area. The memory cells of the EEPROM are arranged into groups, and access to the groups is controlled by select transistors. In this manner the number of select transistors is reduced without requiring the entire array to be programmed or erased.