| 摘要 |
The present invention discloses the use of ion implant recipe changes to control the effective channel length by compensating for any variation in the gate electrode width. The invention provides a method for controlling the effective channel length in FETs by measuring the gate electrode width, sending the measured gate electrode width to an ion implant controller, calculating a desired ion implant condition which compensates for any deviation in the effective channel length from target, and subsequently selecting or generating an ion implant recipe based on the desired conditions. Such ion implant recipe is then implanted into the FET to control the effective channel length by defining the halo, LDD, source, drain, or any other doped regions of the device which define the effective channel length, thereby resulting in a manufacturing process with higher yields and less scrap.
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