发明名称 |
Electrostatic discharge protection device for semiconductor integrated circuit, method for producing the same, and electrostatic discharge protection circuit using the same |
摘要 |
An electrostatic discharge protection device is provided at an input or output of a semiconductor integrated circuit for protecting an internal circuit from an electrostatic surge flowing into or out of the integrated circuit. The electrostatic discharge protection device may include a thyristor, and a trigger diode for triggering the thyristor (e.g., with a low voltage). The trigger diode may include an n-type cathode high impurity concentration region; a p-type anode high impurity concentration region; and an insulator section for electrically insulating a silicide layer formed on a surface of the cathode region from another silicide layer formed on a surface of the anode region.
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申请公布号 |
US6696730(B2) |
申请公布日期 |
2004.02.24 |
申请号 |
US20010003321 |
申请日期 |
2001.12.06 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
KAWAZOE HIDECHIKA;AOKI EIJI;HSU SHENG TENG;FUJII KATSUMASA |
分类号 |
H01L21/332;H01L21/822;H01L21/8238;H01L27/02;H01L27/04;H01L27/092;H01L29/74;H01L29/866;(IPC1-7):H01L23/62 |
主分类号 |
H01L21/332 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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