LASER DIODE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A laser diode and a fabricating method thereof are provided to improve an interfacial characteristic and reduce leakage current by forming a current confinement layer on a selected region. CONSTITUTION: A first clad layer(12), an active layer(14), and a second clad layer(16) are sequentially grown on a substrate(11). A SiO2 layer is deposited on the second clad layer. An upper surface of the second clad layer is exposed by removing partially the SiO2 layer. A diffusion barrier is formed on the upper surface of the SiO2 layer and the exposed surface of the second clad layer. A current confinement layer(17) is formed by diffusing Si of the SiO2 layer to the second clad layer. The residual SiO2 layer and the diffusion barrier are removed therefrom. A cap layer(18) is grown thereon.