发明名称 |
CHIP SIZE PACKAGE TYPE PACKAGE FOR SEMICONDUCTOR AND ITS MANUFACTURING METHOD |
摘要 |
PURPOSE: To provide a CSP (chip size package) type package having a wide external terminal pitch and to provide its manufacturing method. CONSTITUTION: A first resin coat layer for insulating electrically an LSI (large scale integrated circuit) pad 2 and a first contact electrode 4 which are formed on an individualized LSI chip 1 is extended to the outside of the outer rim end of the LSI chip 1 to enlarge a package so as to be bigger than the LSI chip 1. An intermediate wiring layer 5 and a part of a second contact electrode 7 are formed on the first resin coat layer 3 formed at the outside of the outer rim end of the LSI chip 1 while a CSP (chip size package) pad 8 and a CSP bump 9 are formed on the second contact electrode 7. The CSP pad 8 and the CSP bump 9 are formed at the outside of the outer rim end of the LSI chip 1. Accordingly, the pitch of these external terminals can be wider that of the LSI pads 2 arranged so as to be neighbored with a narrow pitch whereby the design and the manufacture of an outer substrate are facilitated. |
申请公布号 |
KR20040016399(A) |
申请公布日期 |
2004.02.21 |
申请号 |
KR20030055975 |
申请日期 |
2003.08.13 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
HORIE MASANAO |
分类号 |
H01L23/12;H01L21/60;H01L23/31;H01L23/485 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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