METHOD FOR FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE INCLUDING DRY ETCH PROCESS USING CF-BASED GAS

摘要

PURPOSE: A method for forming a fine pattern of a semiconductor device including a dry etch process using CF-based gas is provided to form a fine pattern with no contact hole by preventing a striation phenomenon and a bowing phenomenon. CONSTITUTION: A silicon oxide layer formed on a substrate(10) is dry-etched to form a fine pattern in the silicon oxide layer. The dry etch process is performed by using etch medium including CF4 gas and C4F6 gas. The critical dimension of the semiconductor device including the fine pattern is 100 nanometer or lower. The fine pattern is a pattern that defines a contact formation region or storage node formation region in the silicon oxide layer.