| 摘要 |
PURPOSE: A method for manufacturing a transistor is provided to be capable of preventing short channel effect and GIDL(Gate Induced Drain Leakage). CONSTITUTION: A gate electrode(35) with a gate insulating layer(33) and an insulating spacer(37) is formed on a semiconductor substrate(31). A trench is formed by selectively etching the exposed substrate. Lightly doped n-type impurity ions are implanted to the trench. The first epitaxial layer(43) is then grown in the trench. A source/drain region is formed by implanting heavily doped n-type impurity ions into the first epitaxial layer(43). A plug(47) is formed by growing the second epitaxial layer on the first epitaxial layer.
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