| 摘要 |
PURPOSE: To suppress a variation in the characteristics of a thin film transistor using conductive films composed of aluminum or containing aluminum as the main ingredient as at least a source electrode and drain electrode. CONSTITUTION: In a method of manufacturing thin film transistor, the source region 10 and the drain region 11 are formed in parts of a polycrystalline silicon film 4 after a semiconductor thin film layer composed of the polycrystalline silicon film 4 is formed on an insulating substrate 1 and contact holes 14 are formed through an interlayer insulating film 13 formed to cover the silicon film 4 to partially expose the source and drain regions 10 and 11. Then, after at least the source electrode 15 and drain electrode 16 composed of aluminum films are formed through the contact holes 14 so that the electrodes 15 and 16 may be connected respectively to the source and drain regions 10 and 11, a heat treatment is performed at a temperature of about 300°C for about two hours in a nitrogen atmosphere.
|
