| 摘要 |
PURPOSE: A nitride semiconductor laser diode is provided to reduce non-radiative recombination of carriers by making the last barrier layer of a multi quantum well layer formed of AlGaN, and to improve threshold current and external quantum efficiency by optimizing the thickness of the last barrier layer. CONSTITUTION: Current is applied to radiate light from the multi quantum well layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. The multi quantum well layer is a multi stack layer in which a quantum well and a barrier layer are repeatedly and sequentially stacked. The last barrier layer in a direction of the p-type nitride semiconductor layer is made of AlGaN having a potential barrier higher than that of the barrier layer of the multi quantum well layer. |
