METHOD FOR FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE USING VAPOR PHASE SILYLATION

摘要

PURPOSE: A method for forming a fine pattern of a semiconductor device using vapor phase silylation is provided to guarantee sufficient tolerance about a dry etch process even if a resist layer used in a photolithography process is reduced in thickness, and to improve a line edge roughness(LER) phenomenon in a resist pattern. CONSTITUTION: An anti-reflective coating(ARC)(20) is formed on a semiconductor substrate(10). The resist layer including photosensive polymer containing a hydroxyl group is formed on the ARC. The resist layer is exposed and developed to form the resist pattern. A vapor organic silane compound contains a function group capable of reacting with the hydroxyl group. The second organic silane compound contains two function groups capable of reacting with the hydroxyl group. An organic silane compound composed of the first and second organic silane compounds is supplied to the resist pattern to form a resist pattern(30d) that is silylated by a predetermined thickness from the exposed surface of the resist pattern.