发明名称 PHOTODETECTOR AND PHOTODETECTOR MODULE
摘要 PROBLEM TO BE SOLVED: To provide a photodetector having, improved sensitivity, and a photodetector module, which is reduced in the number of parts and improved in the characteristics of resistance to electromagnetic noise. SOLUTION: The photodetector module is provided with a semiconductor substrate 2, containing impurities of a low concentration, a first conductivity-type surface heavily-doped layer 5 formed on the surface of the semiconductor substrate, a first conductivity-type surface electrode 8 connected to the first conductivity type surface heavily doped layer 5, a second conductivity-type surface heavily-doped layer 6 formed on the surface of the semiconductor substrate 2, a second conductivity-type surface electrode 9 connected to the second conductivity-type heavily-doped layer 6, a second conductivity-type backside heavily-doped layer 10 formed on the backside of the substrate 2, and a second conductivity-type back electrode 11 connected to the second conductivity-type backside heavily-doped layer 10. In this case, a first photodetecting unit 3 parallel to the surface of the substrate 2 is formed of the first impurities layer 5, the substrate 2 and the second layer 6, while a second photodetecting unit 4 in the thickness direction of the substrate 2 is formed of the first layer 5, the substrate 2 and the second layer 10. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004055743(A) 申请公布日期 2004.02.19
申请号 JP20020209679 申请日期 2002.07.18
申请人 SANYO ELECTRIC CO LTD;TOTTORI SANYO ELECTRIC CO LTD 发明人 NISHIMURA SUSUMU
分类号 H01L31/10;(IPC1-7):H01L31/10 主分类号 H01L31/10
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