发明名称 ENABLING AN INTERIM DENSITY FOR TOP BOOT FLASH MEMORIES
摘要 An interim density top boot flash memory architecture may be implemented by locking a portion or block of memory to prevent memory read and write accesses, thereby reducing the overall capacity of the memory. At the same time, this may be done without interfering with the access to parameters needed for implementing booting. In some embodiments, the locked memory may be placed at a block above the lowest addressable block that is accessed by an internal address.
申请公布号 US2004032789(A1) 申请公布日期 2004.02.19
申请号 US20020218955 申请日期 2002.08.14
申请人 NGO QUAN H.;MONASA SAAD 发明人 NGO QUAN H.;MONASA SAAD
分类号 G11C8/12;G11C16/08;(IPC1-7):G11C8/00;G11C5/00 主分类号 G11C8/12
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