SCHOTTKY BARRIER TUNNEL TRANSISTOR(SBTT) USING THIN SOI LAYER AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A SBTT(Schottky Barrier Tunnel Transistor) using a thin SOI(Silicon On Insulator) layer and a manufacturing method thereof are provided to be capable of restraining short channel effect and preventing leakage current. CONSTITUTION: A SBTT is provided with a substrate(110) and a buried oxide layer(120) formed on the substrate. At this time, a groove portion is formed on the buried oxide layer. The SBTT further includes a thin SOI layer(130) formed across the upper portion of the groove portion, an insulating layer for enclosing the SOI layer, a gate(150a) formed at the upper portion of the insulating layer, and a source/drain region(160) formed at both sidewalls of the gate. At this time, the source/drain region are made of a silicide layer. Preferably, the groove portion is filled with a conductive layer(150b).