| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing tool, which is used in dry-polishing a silicon bare wafer at a high polishing speed. SOLUTION: A mold is filled with a mixture containing 5-50 weight % of crystal cellulose having an average polymerization degree of 50-400 and an average grain size of 5-150μm, 90-49 weight % of abrasive grains (e.g., magnesium carbonate, calcium carbonate) having Mohs' hardness equal to or smaller than Mohs' hardness of a silicon substrate, and 1-15 weight % of an accelerating agent (e.g., sodium carbonate, sodium bicarbonate, ammonium bicarbonate, sodium chlorate) having a melting point of 60-400°C. The chemo-mechanical polishing tool is formed by pressing the mixture under the pressure of 100-1,000 kgf/cm<SP>2</SP>. The polishing speed is increased by the action of the accelerating agent during polishing the silicon substrates. COPYRIGHT: (C)2004,JPO
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