发明名称 Deposition of organosilsesquioxane films
摘要 There is provided an array of alkyl substituted silsesquioxane thin film precursors having a structure wherein alkyl groups are bonded to the silicon atoms of a silsesquioxane cage. The alkyl groups may be the same as, or different than the other alkyl groups. In a first aspect, the present invention provides a composition comprising a vaporized material having the formula [R-SiO1.5]x[H-SiO1.5]y, wherein x+y=n, n is an integer between 2 and 30, x is an integer between 1 and n and y is a whole number between 0 and n. R is a C1 to C100 alkyl group. Also provided are films made from these precursors and objects comprising these films.
申请公布号 US2004033371(A1) 申请公布日期 2004.02.19
申请号 US20030446435 申请日期 2003.05.27
申请人 HACKER NIGEL P. 发明人 HACKER NIGEL P.
分类号 C07F7/21;C23C16/40;(IPC1-7):B32B9/04;C23C16/00 主分类号 C07F7/21
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