METHOD FOR GENERATING PLASMA USING ACP PROCESS

摘要

PURPOSE: A method for generating plasma using an ACP(Adaptively Coupled Plasma) process is provided to be capable of improving photoresist selectivity. CONSTITUTION: A source power of 90-100 Watt is applied to a quadruple or octuple coil(S301). A bias power of 900-1000 Watt is applied to the lower portion of a chamber(S302). An electric field is generated by the applied power(S303). Plasma is generated at the inner portion of the chamber due to the generated electric field(S304). Preferably, the photoresist selectivity of a plasma etching system is x: 1. At this time, the 'x' is in the range of 6, or higher. Preferably, the etch rate of the plasma etching system is in the range of 8000-9000 angstrom/min at the power of 1600 Watt under a pressure of 40-80 mT.