| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the variation of threshold voltages in p-type and n-type thin film transistors. <P>SOLUTION: Prior to the crystallization by laser, at least one kind of impurity is doped into at least the entire surface of a thin film semiconductor layer so that the ratio of Quasi-Fermi levels in the regions for forming each conductive type transistor therein is limited to 0.5-2. <P>COPYRIGHT: (C)2004,JPO |
