| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To accurately stably generate a reference electric potential, required for a differential sense amplifier to speedily read out data from a non-volatile semiconductor storage unit. <P>SOLUTION: An electric potential of a bit line B3, as the reference electric potential to the electric potential on a bit line B0 of a memory cell MC0, is generated by the steps of connecting a drain and a gate to each bit line (B0, B3), connecting a gate to a first MOSFET (TA0, TA3) having a floating gate structure and a dummy word line (DW0, DW1). As a result, a dummy cell with a second MODFET (TB0, TB3) connected to the first MOSFET in series, having a floating gate structure is constituted. <P>COPYRIGHT: (C)2004,JPO</p> |
